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    • Nano-Optoelectronic Materials and Devices
    Nano-Optoelectronic Materials and Devices

    Nano-Optoelectronic Materials and Devices

    Hieu P Nguyen
    Group Leader
    Nano-Optoelectronic Materials and Devices Laboratory

    Research
    In This Section
    • Home
    • Research
      • Biophotonics Imaging and Sensing
      • Nanoelectronics
      • Nano-Optoelectronic Materials and Devices
        • III-V Nanowire Solar Cells
        • Full-color InGaN/GaN LEDs on Transparent/Metal Substrates for Flexible Electronics
        • Molecular Beam Epitaxial Growth of III-Nitride Nanostructures
        • Photoelctrochemical (PEC) Water Splitting and Hydrogen Generation Using III-Nitride Nanowire Arrays
      • Nanotechnology & Energy
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    Molecular Beam Epitaxial Growth of III-Nitride Nanostructures

    Epitaxial growth and characterization of high-quality III-nitride nanowires.

    Full-color InGaN/GaN LEDs on Transparent/Metal Substrates for Flexible Electronics

    Integrations of LEDs

    III-V Nanowire Solar Cells

    We are developing single- and multi-junction InGaN nanowire solar cells on a Si platform.

    Photoelectrochemical (PEC) Water Splitting and Hydrogen Generation Using III-Nitride Nanowire Arrays

    We study the design, epitaxial growth, and characterization of multi-band InGaN nanowire heterostructures and the solar power driven photocatalytic reaction.

    University Heights, Newark, NJ 07102 USA (973) 596-3000
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    NJIT
    • University Heights, Newark, New Jersey 07102 USA
    • (973) 596-3000
    NJIT
    • University Heights, Newark, New Jersey 07102 USA
    • (973) 596-3000